Engineering Research Academic Forum (No. 773), College of Engineering
Presentation Title: High-Efficiency Nitride LED Epitaxial Growth and Chip Fabrication Technology for Semiconductor Lighting and Display
Presenter: Prof. Zhou Shengjun
Location: Join via Tencent Meeting by clicking the link or adding the meeting ID to your meeting list:
Meeting Link: https://meeting.tencent.com/dm/jA2MCLWFtcvA
Tencent Meeting ID: 753-161-194
Time: 8:00 PM – 11:00 PM, March 10, 2026
Abstract
GaN-based LEDs offer advantages such as energy efficiency, environmental friendliness, long lifespan, and compact size, making them highly valuable for applications including general lighting, automotive lighting, high-resolution full-color displays, and visible light communication. This presentation introduces the use of MOCVD in-situ growth technology, laser processing technology, ICP etching technology, and TMAH wet etching technology to fabricate micro/nano structures at different locations on Mini/Micro-LED chips, enhancing their light extraction efficiency.
High-current driving is required for LED chips used in automotive headlights and specialized lighting applications. To address the challenge of current injection due to current crowding under high-current driving conditions, a three-dimensional flip-chip LED structure was designed and fabricated. Utilizing three-dimensional through-hole electrodes arranged in an array, the lateral current spreading length is shortened, resulting in more uniform current distribution and solving the current crowding problem. This has achieved an electrical efficiency of 99% for blue LED chips and doubled the light output saturation current density.
Introducing an InGaN/GaN superlattice into the green LED epitaxial structure allows for tuning the density and size of V-pits by adjusting the growth temperature and period of the superlattice. Using V-pits to shield dislocations has increased the luminous efficiency of green LED chips by 69.2%. A stepped quantum well structure was introduced into InGaN-based yellow LEDs to increase the spatial overlap integral of electron and hole wave functions, significantly improving the luminous efficiency of yellow LEDs.
A method using a sputtered AlN nucleation layer/patterned sapphire substrate template to control the dislocation density of nitride materials has been developed, providing technical support for high-efficiency ultraviolet LEDs. Monolithically integrated III-nitride quantum structures for full-spectrum white LEDs have been realized through bandgap engineering heteroepitaxial growth. This has achieved full-spectrum emission close to sunlight with high efficiency, high color rendering capability, and low blue light hazard, offering a new strategy for high-quality healthy lighting.
In conjunction with the above research, the presenter will also share experiences in applying for National Natural Science Foundation of China (NSFC) grants.
Biography
Prof. Zhou Shengjun has long been engaged in research on nitride LED epitaxial growth and chip fabrication technology. He has led over 10 national and provincial/ministerial research projects. He has published more than 130 SCI-indexed papers as first author or corresponding author in prestigious international journals such as Science Bulletin, Nano Letters, Laser & Photonics Reviews, Nano Energy, Microsystems & Nanoengineering, ACS Applied Materials & Interfaces, Nanoscale, Applied Physics Letters, Optics Express, Optics Letters, IEEE Transactions on Electron Devices, and Journal of Applied Physics. Among these, 7 are ESI Highly Cited Papers and 2 are ESI Hot Papers. He is the lead editor of 2 academic monographs (published by Science Press and Springer) and holds 43 authorized national invention patents (21 have been transferred for commercial application). His research findings have been featured 36 times in Semiconductor Today and Compound Semiconductor columns.
Prof. Zhou served as Co-Chair of the Organizing Committee for the 17th ICEPT International Conference and is a Youth Editorial Board Member for Acta Photonica Sinica and Journal of Mechatronics and Hydraulic Systems Engineering. He has received awards including the China Industry-University-Research Collaboration Innovation Award (Individual), the IAAM Scientist Medal, and the IOP Publishing China Top Cited Paper Award. Prof. Zhou Shengjun is recognized as a National High-Level Talent and an Elsevier China Highly Cited Researcher.
All faculty and students are welcome to attend!
Organized by:
Key Laboratory of Intelligent Manufacturing Technology (Ministry of Education)
Shantou Key Laboratory of Intelligent Equipment and Technology
Guangdong Provincial Engineering Technology Research Center for Robot Design
College of Engineering
March 9, 2026
